One integrated circuit design calls for the diffusion of

One integrated circuit design calls for the diffusion of

One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the background concentration of As in Si is 2.5 x 1020 atoms/m3. The predeposition heat treatment is to be conducted at 1000째C for 45 minutes, with a constant surface concentration of 8 x 1026 As atoms/m3. At a drive-in treatment temperature of 1100째C, determine the diffusion time required for a junction depth of 1.2 m. For this system, values of Qd and D0 are 4.10eV and 2.29 x 10-3 m2/s, respectively.

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